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SEMTECH ELECTRONICS

ST2N3904 Datasheet Preview

ST2N3904 Datasheet

NPN Silicon Epitaxial Planar Transistor

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ST 2N3903 / 2N3904
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary types the PNP transistors
ST 2N3905 and ST 2N3906 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Symbol
Value
Collector Base Voltage
VCBO
60
Collector Emitter Voltage
VCEO
40
Emitter Base Voltage
VEBO
6
Collector Current
IC 100
Peak Collector Current
Power Dissipation
ICM 200
Ptot 5001)
Junction Temperature
Tj 150
Storage Temperature Range
TS -55 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
G S P FORM A IS AVAILABLE
Unit
V
V
V
mA
mA
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®




SEMTECH ELECTRONICS

ST2N3904 Datasheet Preview

ST2N3904 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

ST 2N3903 / 2N3904
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
DC Current Gain
at VCE=1V, IC=0.1mA
at VCE=1V, IC=1mA
at VCE=1V, IC=10mA
at VCE=1V, IC=50mA
at VCE=1V, IC=100mA
ST 2N3903
hFE
20
-
-
ST 2N3904
hFE
40
-
-
ST 2N3903
hFE
35
-
-
ST 2N3904
hFE
70
-
-
ST 2N3903
hFE
50
- 150
ST 2N3904
hFE
100
-
300
ST 2N3903
hFE
30
-
-
ST 2N3904
hFE
60
-
-
ST 2N3903
hFE
15
-
-
ST 2N3904
hFE
30
-
-
Collector Saturation Voltage
at IC=10mA, IB=1mA
at IC=50mA, IB=5mA
VCEsat
VCEsat
-
-
- 0.2
- 0.3
Base Saturation Voltage
at IC=10mA, IB=1mA
at IC=50mA, IB=5mA
Collector Cutoff Current
VBEsat
VBEsat
-
-
- 0.85
- 0.95
at VEB=3V, VCE=30V
ICEV
-
- 50
Emitter Cutoff Current
at VEB=3V, VCE=4V
IEBV
-
- 50
Collector Base Breakdown Voltage
at IC=10µA, IE=0
Collector Emitter Breakdown Voltage
V(BR)CBO
60
-
-
at IC=1mA, IB=0
Emitter Base Breakdown Voltage
V(BR)CEO
40
-
-
at IE=10µA, IC=0
V(BR)EBO
6
-
-
Gain Bandwidth Product
at VCE=20V,IC=10mA,f=100MHz ST 2N3903
fT
250
-
ST 2N3904
fT
300
-
-
-
Collector Base Capacitance
at VCB=5V, f=100kHz
CCBO
-
-
4
Emitter Base Capacitance
at VEB=0.5V, f=100kHz
Thermal Resistance Junction to Ambient
CEBO
RthA
-
-
-8
- 2501)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
G S P FORM A IS AVAILABLE
Unit
-
-
-
-
-
-
-
-
-
V
V
V
V
nA
nA
V
V
V
MHz
MHz
pF
pF
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 16/06/2004


Part Number ST2N3904
Description NPN Silicon Epitaxial Planar Transistor
Maker SEMTECH ELECTRONICS
Total Page 4 Pages
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