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SENSITRON SEMICONDUCTOR

HER1603PT-G Datasheet Preview

HER1603PT-G Datasheet

16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

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SENSITRON
SEMICONDUCTOR

HER1601PT-G – HER1606PT-G
16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Data Sheet 4847, Rev. -
Green Pro ducts
Features
 l Glass Passivated Die Construction
H
l Ultra-Fast Switching
l High Current Capability
l Low Reverse Leakage Current
S
l High Surge Current Capability
J
l Plastic Material has UL Flammability
R
K
       Cla s s ification 9 4V-O                                   P IN1  2  3     
       G reen Products in Compliance with the
L
P
RoHS Directive
Mechanical Data
N
l Case: Molded Plastic
l Terminals: Plated Leads Solderable per
M
MIL-STD-750, Method 2026
l Polarity: See Diagram
l Weight: 5.6 grams (approx.)
l Mounting Position: Any
  l   M a rkin g: Type Num b e r                         
A
B
C
TO-3P
Dim Min Max Min Max
A 3.20 3.50 0.126 0.138
B 4.59 5.16 0.181 0.203
C 20.80 21.30 0.819 0.839
D 19.70 20.20 0.776 0.795
E 2.10 2.40 0.083 0.094
G 0.51 0.76 0.020 0.030
H 15.90 16.40 0.626 0.646
J 1.70 2.70 0.067 0.106
K 3.10 Ø 3.30 0.12 Ø 0.130
L 3.50 4.51 0.138 0.178
M 5.20 5.70 0.205 0.224
N 1.12 1.22 0.044 0.048
P 2.90 3.30 0.114 0.130
R 11.70 12.80 0.46 0.504
S 4.30 Typical 0.169Typical
In mm
In inch


PIN 1 +
+
 G PIN 3 -
Case PIN 2
D
E
Maximum Ratings and Electrical Characteristics @TA=25°unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol HER HER HER HER HER HER HER HER Unit
1601PT-G 1602PT-G 1603PT-G 1604PT-G 1605PT-G 1606PT-G 1607PT-G 1608PT-G
VRRM
V RWM
VR
50 100 200 300 400 600 800 1000 V
V R(RMS)
35
70 140 210 280 420 560 700 V
Average Rectified Output Current @TC = 100°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 8.0A
@TA = 25°C
@TA = 125°C
VFM
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
16
200
1.0
50
85
1.3
10
500
-55 to +150
A
A
1.7 V
µA
80 nS
60 pF
°C
   !  ! !!"#$
 % & '(&)*+,,---. &  ./012&%# %3 &  ./0




SENSITRON SEMICONDUCTOR

HER1603PT-G Datasheet Preview

HER1603PT-G Datasheet

16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

No Preview Available !

SENSITRON
SEMICONDUCTOR
Data Sheet 4847, Rev. -
20

HER1601PT-G – HER1606PT-G
16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
100 Green Pro ducts

16
12
1601PT - 1604PT
10

 8
1.0
1605PT
1606PT - 1608PT
4
0
0 50 100 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
       300                   8.3mssinglehalf-sine-wave       
 JEDEC method


200
Pulse width = 300µs
2% duty cycle
0.1
0 0.6 1.2 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
400
Tj = 25°C
f = 1.0MHz
100
HER1601PT-G -
HER1605PT-G

100
HER1606PT-G -
HER1608PT-G
0
1
10 50
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
10
0.1
+0.5A
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
   !  ! !!"#$
 % & '(&)*+,,---. &  ./012&%# %3 &  ./0


Part Number HER1603PT-G
Description 16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Maker SENSITRON SEMICONDUCTOR
Total Page 3 Pages
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