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ES3BF Datasheet Preview

ES3BF Datasheet

Super Fast Recovery Rectifier Diode

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超快恢复整流二极管 ES3AF THRU ES3KF
Super Fast Recovery Rectifier Diode
■特征 Features
Io 3.0A
VRRM
50V~800V
玻璃钝化芯片
Glass passivated chip
耐正向浪涌电流能力高
High surge forward current capability
■用途 Applications
作一般电源单相整流
For general power supply
single-phase rectifier
■外形尺寸和印记 Outline Dimensions and Mark
SMAF
.189(4.80)
.173(4.40)
.142(3.60)
.134(3.40)
.053(1.35)
.045(1.15)
0.232
(5.9)
.110(2.80) .057(1.45)
.094(2.40) .053(1.35)
0.075
(1.9)
0.035(0.90)typical
.009(0.22)
.006(0.15)
0.106
(2.7)
Dimensions in inches and (millimeters)
0.063
(1.6)
■极限值(绝对最大额定值)
Limiting ValuesAbsolute Maximum Rating
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
平均整流输出电流
Average Rectified Output
Current
IO
A
60Hz单向半波,电阻负载,Ta=75
60Hz One-way half-wave, R-load,Ta=75
正向(不重复)浪涌电流
Surge(Non-repetitive)
Forward Current
存储温度
Storage Temperature
结温
Junction Temperature
IFSM
A
Tstg
Tj
60HZ正弦波,一个周期,Tj=25
60HZ sine wave, 1 cycle, Tj=25
ES3
AF BF DF FF GF JF KF
50 100 200 300 400 600 800
3.0
100
-55 ~+150
-55 ~+150
■电特性 (Ta=25℃ 除非另有规定)
Electrical CharacteristicsTa=25Unless otherwise specified
参数名称
符号 单位
测试条件
Item
Symbol Unit
Test Condition
正向峰值电压
Peak Forward Voltage
VFM
V
IFM=2.0A
最大反向恢复时间
Maximum reverse recovery trr ns
time
IF=0.5A,IR=1.0A,IRR=0.25A
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
IRRM
μA
RθJ-L /W
VRM=VRRM , Ta=25
结和引线之间
Between junction and lead
ES3
AF BF DF FF GF JF KF
1.0 1.3 1.7 1.85
35
5
200
20
Document Number 0171
Shanghai SEQ Electronic Technology Co., Ltd.
www.seqsemi.com




SEQ

ES3BF Datasheet Preview

ES3BF Datasheet

Super Fast Recovery Rectifier Diode

No Preview Available !

ES3AF THRU ES3KF
■特性曲线(典型) Characteristics(Typical)
50 ohm
Noninductive
10 ohm
Noninductive
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
Note1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
3.5
3.0
2.4
1.8
1.2 Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0. 315"(8.0×8. 0mm)
0.6 pad areas
0.0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig.4 Typical Forward Characteristics
10
TJ=25°C
1.0
0.1
ES3AF
ES3EF
ES3JF
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instaneous Forward Voltage (V)
+0.5
0
-0.25
trr
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
10
TJ=125°C
TJ=75°C
1.0
TJ=25°C
0.1
0
20 40 60 80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
45
40
35
30
25
20
15
10
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
1 10
Reverse Voltage (V)
100
Document Number 0171
Shanghai SEQ Electronic Technology Co., Ltd.
www.seqsemi.com


Part Number ES3BF
Description Super Fast Recovery Rectifier Diode
Maker SEQ
PDF Download

ES3BF Datasheet PDF





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