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MJE370 Datasheet Complementary Medium Power Transistor

Manufacturer: SGS-THOMSON

Overview: SGS-THOMSON MJE370 MJE520 COMPLEMENTARY MEDIUM POWER TRANSISTORS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­ ral purpose amplifier and switching circuits.

INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol P aram eter Vcbo Collector-base Voltage (Ie = 0) o

December 1988 V a lue 30 30 4 3 7 2 25 - 6 5 to 150 150 U n it V V V A A A W °C °C 1/4 MJE370-MJE520 THERMAL DATA »th j-ca se Thermal Resistance Junction-case Max °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Symbol Param eter T e s t Conditions IcB O Collector Cutoff Current (Ie =0) VCB = 30V < II CD II O hpE* DC Current Gain * Pulsed : pulse duration = 300ps, duty cycle < 1.5%.

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