Part number:
BLH3355
Manufacturer:
SHANGHAI BELLING
File Size:
113.90 KB
Description:
Npn epitaxial silicon rf transistor.
* Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol VCBO VCEO VEBO IC
BLH3355
SHANGHAI BELLING
113.90 KB
Npn epitaxial silicon rf transistor.
📁 Related Datasheet
BLH3356 High-frequency low-noise NPN transistor (SHANGHAI BELLING)
BLH3356B High-frequency low-noise NPN transistor (SHANGHAI BELLING)
BLH301 High Sensitivity /Low Power Hall Effect Switch (BELLING)
BLH4083 High frequency amplifying transistor (SHANGHAI BELLING)
BLH4083B High frequency amplifying transistor (SHANGHAI BELLING)
BLH4901B High-frequency low-noise NPN transistor (SHANGHAI BELLING)
BLH4901C High-frequency low-noise NPN transistor (SHANGHAI BELLING)
BL-23G Emitter for Optical Fiber(GaAlAs) (KODENSHI KOREA CORP)
BL-8511 LED back light (Everlight)
BL-8723 IEE802.11 b/g/n WIFI + BT 2.1/3.0/4.0 USB MODULE (ETC)
