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BLH3355 - NPN EPITAXIAL SILICON RF TRANSISTOR

Description

NPN epitaxial silicon RF transistor for microwave low-noise amplification

Features

  • Low noise and high gain bandwidth product High power gain.

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Datasheet Details

Part number BLH3355
Manufacturer SHANGHAI BELLING
File Size 109.66 KB
Description NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet download datasheet BLH3355 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Value 20 12 3.
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