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HBT151 Datasheet Silicon Controlled Rectifier

Manufacturer: SHANTOU HUASHAN

Datasheet Details

Part number HBT151
Manufacturer SHANTOU HUASHAN
File Size 951.54 KB
Description Silicon Controlled Rectifier
Download HBT151 Download (PDF)

General Description

Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.

Typical applications include motor control, industrial and domestic lighting, heating and static switching.

Absolute Maximum Ratings Ta=25 Tstg Storage Temperature ------------------------------------------------------ 40~150 Tj Operating Junction Temperature --------------------------------------------------- 125 VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT RMS R.M.S On-State Current all conduction angles ----------------------------------------------12A IT(AV) ITSM I2t Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.5A Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- 50A2s PGM Forward Peak Gate Power Dissipation (Ta=25 --------------------------------------------------- 5W PG(AV) Forward Average Gate Power Dissipation (over any 20 ms period ----------------------------0.5W IFGM VRGM Forward Peak Gate Current -------------------------------------------------------------------------------- 2A Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd.

Overview

Shantou Huashan Electronic Devices Co.,Ltd.

HBT151 Silicon Controlled.

Key Features

  • Repetitive Peak Off-State Voltage : 600V.
  • R. M. S On-State Current(IT(RMS)=12A).
  • Average On-State Current (IT(AV)=7.5A).
  • Non-isolated Type General.