Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1020S
█ APPLICATIONS
power amplifier Applications,
power Switching Applications.
█ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-2A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
-50
-50
V IC=-100μA, IE=0
V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-5 V IE=-100μA，IC=0
-1.0 μA VCB=-50V, IE=0
Emitter Cut-off Current
-1.0 μA VEB=-5V, IC=0
DC Current Gain
70 240 VCE=-2V, IC=-0.5A
40 VCE=-2V, IC=-1.5A
Collector- Emitter Saturation Voltage
-0.5 V IC=-1A, IB=-50mA
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
-1.2 V IC=-1A, IB=-50mA
100 MHz VCE=-2V, IC=-0.5A
40 pF VCB=-10V, IE=0，f=1MHz
0.1 μS
Storage Time
1.0 μS See specified test circuit
Fall Time
0.1 μS
█ hFE Classification
O
70—140
Y
120—240
