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SHANTOU HUASHAN ELECTRONIC DEVICES

H1116 Datasheet Preview

H1116 Datasheet

PNP SILICON TRANSISTOR

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DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICO N T R A N S I S T O R
H1116
APPLICATIONS
Audio frequency power Aamplifier& Medium
Speed switching Low frequency power amplifier.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
-55~150
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
75 0mW
- 60 V
- 50 V
VEBO Emitter- Base Voltage
-6V
IC Collector Current
-1A
ICP Collector Current Pulse
-2A
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE 1 DC Current Gain
HFE 2 DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
fT Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
TO-92
1 Emitter E
2 Collector C
3 Base B
Unit Test Conditions
135 270
200 400
300 600




SHANTOU HUASHAN ELECTRONIC DEVICES

H1116 Datasheet Preview

H1116 Datasheet

PNP SILICON TRANSISTOR

No Preview Available !

DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1116


Part Number H1116
Description PNP SILICON TRANSISTOR
Maker SHANTOU HUASHAN ELECTRONIC DEVICES
Total Page 3 Pages
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