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SHINDENGEN

D6FEC15ST Datasheet Preview

D6FEC15ST Datasheet

Schottky Barrier Diode

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Twin SchottkyBarrierDiode
D6FEC15ST
■外観図 OUTLINE
PackageFE
Unit:mm
150V6A
特長
SMD
高耐圧
超低I
AEC-Q101準拠
Feature
SMD
High Voltage
6EC15
T
00
00
Based on AEC-Q101
外形図については新電元 Webサイトをご参照下さい。捺印表示については捺
印仕様をご確認下さい。
Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
■定格表 RATINGS
●絶対最大定格 AbsoluteMaximum Ratings指定のない場合 Tc=25℃)
項目
Item
記号
Symbol
条件
Conditions
保存温度
StorageTemperature
接合部温度
OperationJunctionTemperature
せん頭逆電圧
Maximum ReverseVoltage
出力電流
AverageRectifiedForwardCurrent
せん頭サージ順電流
PeakSurgeForwardCurrent
Tstg
Tj
VRM
Io
IFSM
IFSM1
50Hz正弦波,抵抗負荷,
1素子当りの出力電流平均値 Io/2,Tc=154℃
50Hzsinewave,Resistanceload,
RatingforeachdiodeIo/2,Tc=154˚C
50Hz正弦波,非繰り返し 1サイクルせん頭値,Tj=25℃
50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25˚C
tp=1ms,Tj=25℃,非繰り返し
tp=1ms,Tj=25˚C,Non-repetitive
規格値
Ratings
-55~175
175
150
6
100
180
単位
Unit
V
A
A
●電気的・熱的特性
順電圧
ForwardVoltage
逆電流
ReverseCurrent
接合容量
JunctionCapacitance
熱抵抗
ThermalResistance
ElectricalCharacteristics指定のない場合 Tc= 25℃)
VF
IR
Cj
θjc
IF= 3A,
パルス測定,1素子当りの規格値
Pulsemeasurement,Perdiode
VR= 150V,
パルス測定,1素子当りの規格値
Pulsemeasurement,Perdiode
f= 1MHz,VR= 10V
1素子当りの規格値
Perdiode
接合部・ケース間
Junctiontocase
MAX 0.88
MAX 8
TYP 52
MAX 4
V
μA
pF
℃/W
6 www.shindengen.co.jp/product/semi/




SHINDENGEN

D6FEC15ST Datasheet Preview

D6FEC15ST Datasheet

Schottky Barrier Diode

No Preview Available !

■特性図 CHARACTERISTIC DIAGRAMS
Forward Voltage
Reverse Current
D6FEC15ST
Forward Power Dissipation
Reverse Power Dissipation
Derating Curve
Peak Surge Forward Current Capability
Peak Surge Forward Current Capability
Peak Surge Forward Current Derating vs Junction Temperature Junction Capacitance
Transient Thermal Impedance
* Sinewaveは 50Hzで測定しています。
50Hzsinewaveisusedformeasurements.
www.shindengen.co.jp/product/semi/
6


Part Number D6FEC15ST
Description Schottky Barrier Diode
Maker SHINDENGEN
Total Page 4 Pages
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