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SHINDENGEN

M1FH3 Datasheet Preview

M1FH3 Datasheet

Schottky Barrier Diode

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SHINDENGEN
Schottky Rectifiers (SBD)
M1FH3
30V 1.5A
OUTLINE DIMENSIONS
Single
RATINGS
œAbsolute Maximum Ratings
Item
Storage Temperature
Operating Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
(Tc=25Ž)
Symbol
Conditions
Tstg
Tj
VRM
IO
50Hz sine wave, R-load Tc=105Ž
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
œElectrical Characteristics
Item
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Tc=25Ž
Symbol
Conditions
VF1 IF=0.5A, Pulse measurement
VF2 IF=1.5A, Pulse measurement
IR VR=VRM, Pulse measurement
Cj f=1MHz, VR=10V
Æjc junction to case
Æjl junction to lead
Æja junction to ambient On glass-epoxy substrate
Ratings
-55`125
125
30
1.5
30
Unit
Ž
Ž
V
A
A
Ratings
Max.0.30
Max.0.36
Max.1.0
Typ.80
Max.18
Max.20
Max.80
Unit
V
mA
pF
Ž/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd




SHINDENGEN

M1FH3 Datasheet Preview

M1FH3 Datasheet

Schottky Barrier Diode

No Preview Available !

M1FH3
Forward Voltage
10
5
2
Tc=125°C [MAX]
Tc=125°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
1
0.5
0.2
0.1
0
Pulse measurement per diode
0.2 0.4 0.6 0.8 1 1.2
Forward Voltage VF [V]


Part Number M1FH3
Description Schottky Barrier Diode
Maker SHINDENGEN
Total Page 11 Pages
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