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SVF4N150P7 - 1500V N-CHANNEL MOSFET

Download the SVF4N150P7 datasheet PDF. This datasheet also covers the SVF4N150PF variant, as both devices belong to the same 1500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 4A, 1500V, RDS(on)(typ)=5.0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N150PF-SILANMICROELECTRONICS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N150P7
Manufacturer SILAN MICROELECTRONICS
File Size 371.23 KB
Description 1500V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N150P7 Datasheet

📁 Similar Datasheet

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Other Datasheets by SILAN MICROELECTRONICS

Part Number Description
SVF4N150PF 1500V N-CHANNEL MOSFET
SVF4N150F 1500V N-CHANNEL MOSFET
SVF4N60CADTR 600V N-CHANNEL MOSFET
SVF4N60CAF 600V N-CHANNEL MOSFET
SVF4N60CAK 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet 4A, 1500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. FEATURES  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No.
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