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SVF4N150PF - 1500V N-CHANNEL MOSFET

Description

SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 4A, 1500V, RDS(on)(typ)=5.0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L.

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Datasheet Details

Part number SVF4N150PF
Manufacturer SILAN MICROELECTRONICS
File Size 371.23 KB
Description 1500V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N150PF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet 4A, 1500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. FEATURES  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No.
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