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SVF4N60T Datasheet 600V N-CHANNEL MOSFET

Manufacturer: SILAN MICROELECTRONICS

Download the SVF4N60T datasheet PDF. This datasheet also includes the SVF4N60D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVF4N60D-SILANMICROELECTRONICS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N60T
Manufacturer SILAN MICROELECTRONICS
File Size 493.31 KB
Description 600V N-CHANNEL MOSFET
Download SVF4N60T Download (PDF)

General Description

SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Overview

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.