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SINOPOWER

SM6002NSKP Datasheet Preview

SM6002NSKP Datasheet

N-Channel Enhancement Mode MOSFET

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SM6002NSKP
Features
· 60V/75A,
RDS(ON)=8mW (max.) @ VGS=10V
· 100% UIS+Rg tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
D (5, 6, 7, 8)
Pin 1
Applications
· SMPS Synchronous Rectifier.
· Power Management in DC/DC Converters.
· SMPS Secondary O-ring.
.
G (4)
S (1, 2, 3)
N-Channel MOSFET
Ordering and Marking Information
SM6002NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM6002NS KP :
SM6002
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.5 - January, 2016
1
www.sinopowersemi.com




SINOPOWER

SM6002NSKP Datasheet Preview

SM6002NSKP Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM6002NSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
IDM a
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
t £ 10s
Steady State
60
±25
150
-55 to 150
30
300
75
47
96
38
1.3
20
60
V
°C
A
W
°C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
30 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
225 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.5 - January, 2016
2
www.sinopowersemi.com


Part Number SM6002NSKP
Description N-Channel Enhancement Mode MOSFET
Maker SINOPOWER
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