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SINOPOWER

SM6002NSKP Datasheet Preview

SM6002NSKP Datasheet

N-Channel Enhancement Mode MOSFET

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SM6002NSKP
Features
· 60V/60A,
RDS(ON)=8mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6-8
D (5, 6)
Pin 1
Applications
· SMPS Synchronous Rectifier.
· Power Management in DC/DC Converters.
· SMPS Secondary O-ring.
.
G (4)
S (1, 2, 3)
N-Channel MOSFET
Ordering and Marking Information
SM6002NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM6002NS KP :
SM6002
XXXXX
XXXXX - Date Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2013
1
www.sinopowersemi.com
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SINOPOWER

SM6002NSKP Datasheet Preview

SM6002NSKP Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM6002NSKP
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJ A
IAS b
EAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse (L=0.1mH)
Avalanche Energy, Single pulse (L=0.1mH)
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
t £ 10s
Steady State
60
±25
150
-55 to 150
30
120
80
60*
38
50
20
2.5
20
50
45
100
V
°C
A
W
°C/W
A
mJ
Note a* Current limited by bond wire.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Gfs Forward Transconductance
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
TJ=125°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=30A
TJ=125°C
VDS=5V, IDS=20A
60
-
-
2
-
-
-
-
- -V
-1
- 30 mA
3 4V
- ±100 nA
6.5 8
10.4 - mW
150 -
S
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2013
2
www.sinopowersemi.com


Part Number SM6002NSKP
Description N-Channel Enhancement Mode MOSFET
Maker SINOPOWER
Total Page 12 Pages
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