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MBR20150PT Datasheet Preview

MBR20150PT Datasheet

Power Schottky Rectifier

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MBR20150PT
Power Schottky Rectifier - 20Amp 150Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications
94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
Application
-AC/DC Switching Adaptor and other Switching Power Supply
-TFT-LCD and DVD Power Supply
Absolute maximum ratings
Symbol
IF(AV)
VRRM
IFSM
VF(max)
Tj
Tstg
Ratings
20
150
150
0.92
-50 to +175
-50 to +150
Unit Conditions
A At Tc=125ºC
Maximum repetitive peak
V
reverse voltage
8.3ms single half sine-wafe
A
single shot
V At IF=10A, Tc=25ºC
ºC
ºC
Electrical characteristics
Parameters
Symbol Ratings
Maximum Instantaneous
Forward Voltage
VF
0.92V
0.75V
Maximum Reverse Current At
Rated DC Blocking Voltage
IR
50µ A
10mA
Voltage Rate of Change dv/dt 10,000 V/µs
Typical Thermal Resistance, Rth (j-c)
Junction to Case
1.2 ºC/W
Conditions
Tc=25ºC
Tc=125ºC
Tc=25ºC
Tc=125ºC
Rated VR
Per diode
Note: (1)Pulse Test : 380µs pulse width, 2% duty cycle
http:// www.sirectifier.com
TO-3P
E
DL
CO
PF
B
QI
H
G
KK
A1
A2
M
J
A
N
K
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
NOTE
A .744 .783 18.90 19.90
B .787 .827 20.00 21.00
C .346 .368 8.80 9.35
D .512 .535 13.00 13.60
E .602 .628 15.30 15.95
F .256 .276 6.50 7.00
G .077 .085 1.95 2.15
H .098 .108 2.50 2.75
I .528 .551 13.40 14.00
J .035 .041 0.90 1.05
K .205 .220 5.20 5.60
L .183 .195 4.65 4.95
M .022 .035 0.55 0.90
N .053 .059 1.35 1.50
O .055 .065 1.40 1.65
P .165 .183 4.20 4.65
Q .128 .140 3.25 3.55
April 2004
1




SIRECT

MBR20150PT Datasheet Preview

MBR20150PT Datasheet

Power Schottky Rectifier

No Preview Available !

MBR20150PT
10
9 d= 0.1 d= 0.2 d= 0.5
8
7 d= 0.05
d= 1
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
IF(av)(A)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
12
Rth(j-a) = Rth(j-c)
10
8
6
Rth(j-a) = 15 /W
4
2
0
0
25 50 75 100 125 150 175
Tamb( )
Figure 2. Average forward current versus ambient
temperature (d= 0.5, per diode)
200
175
150
125
Tc = 50
100
75 Tc = 75
50
25 Tc = 125
0
1E-3
1E-2
1E-1
t(s)
1E+0
Figure 3. Non repetitive surge peak forward current
versus overload duration (maximum values, per diode)
1.0
0.8
d= 0.5
0.6
d= 0.2
0.4
d= 0.1
0.2
Single pulse
0.0
1E-3
1E-2
1E-1
1E+0
tp(s)
Figure 4. Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1E+5
1E+4
1E+3
1E+2
1E+1
Tj = 175
Tj = 150
Tj = 125
Tj = 100
1000
100
F = 1MHz
Tj = 25
1E+0
1E-1
Tj = 25
1E-2
0
25 50 75 100 125 150
VR(V)
Figure 5. Reverse leakage current versus reverse
voltage applied (typical values, per diode)
10
2
5 10
20
50 100
200
VR(V)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
http:// www.sirectifier.com
2


Part Number MBR20150PT
Description Power Schottky Rectifier
Maker SIRECT
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MBR20150PT Datasheet PDF





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