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SIRECTIFIER

MBR3060CT Datasheet Preview

MBR3060CT Datasheet

Schottky Barrier Diode

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MBR3050CT thru MBR3060CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR3050CT 50
35
50
MBR3060CT 60
42
60
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=100oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IF=30A @TJ=125oC
IF=15A @TJ=25oC
IF=30A @TJ=25oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=125oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
30
200
10000
0.85
0.80
0.95
0.2
40
2.0
400
-55 to +150
-55 to +175
Unit
A
A
V/us
V
mA
oC/W
pF
oC
oC
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
P1
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com




SIRECTIFIER

MBR3060CT Datasheet Preview

MBR3060CT Datasheet

Schottky Barrier Diode

No Preview Available !

MBR3050CT thru MBR3060CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10 RESISTIVE OR
INDUCTIVE LOAD
025
50
75
100
125
150
175
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
TJ = 125 C
10
1.0
0.1
TJ = 25 C
0.01
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
1.0
TJ = 25 C
PULSE WIDTH 300us
0.1
2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com



Part Number MBR3060CT
Description Schottky Barrier Diode
Maker SIRECTIFIER
Total Page 2 Pages
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MBR3060CT Datasheet PDF





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