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SI Semiconductors

MJE13009 Datasheet Preview

MJE13009 Datasheet

TRANSISTOR

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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
MJE13009
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES:■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-220/220S
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
集电极电流
Collector Current
集电极耗散功率
Total Power Dissipation
最高工作温度
Junction Temperature
贮存温度
Storage Temperature
SYMBOL
VCBO
VALUE
700
VCEO
400
VEBO
9
IC 12
Ptot 100
Tj 150
Tstg -65-150
UNIT
V
V
V
A
W
°C
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
SYMBOL
ICBO
ICEO
VCBO
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
VCEO
VEBO
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
Vcesat
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vbesat
测试条件
TEST CONDITION
VCB=700V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=8.0A,IB=1.6A
IC=12A,IB=3.0A
IC=8A,IB=1.6A
最小值
MIN
700
400
9
最大值
MAX
100
250
0.8
1.8
1.5
单位
UNIT
μA
μA
V
V
V
V
V
电流放大倍数
DC Current Gain
hFE
贮存时间/Storage Time
tS
下降时间/Falling Time
tf
●订单信息/ORDERING INFORMATION:
VCE=5V,IC=10mA
VCE=5V,IC=3A
VCE=5V,IC=12A
VCC=5V,IC=0.5A
(UI9600)
7
10
5
5.0
40
9.0
0.18
µs
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 普通袋装/NORMAL PACKING
MJE13009 TO-220
MJE13009 TO-220-HF
TO-220S 普通袋装/NORMAL PACKING
MJE13009 TO-220S
MJE13009 TO-220S-HF
TO-220 条管装/TUBE PACKING
MJE13009 TO-220-TU
MJE13009 TO-220-TU-HF
1
Si semiconductors 2013.1




SI Semiconductors

MJE13009 Datasheet Preview

MJE13009 Datasheet

TRANSISTOR

No Preview Available !

深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
产品规格书
Product Specification
MJE13009
Ic(A)
100
SOA (DC)
10
1
0.1
0.01
1
hFE
100
10 100
hFE - Ic
Tj=125
Tj=25
10 Tj= 40
Vce(V)
1000
%
120
PtotTj
100
80
60 Ptot
IS/B
40
20
0
0 50 100
hFE
100
hFE - Ic
Tj=125
150 Tj(℃)200
Tj=25
10 Tj= 40
Vce=1.5V
1 Ic(A)
0.01
0.1
1
10 100
Vces(v)
10
hFE=5
Vcesat - Ic
Tj=125
Tj= 40
Tj=25
1
0.1
0.01
0.01
0.1
1
Ic(A)
10 100
Vce=5V
1
0.01
0.1
Vbes(v)
10
hFE=5
1 10 Ic(A)100
Vbesat - Ic
Tj= 40
1
Tj=25
Tj=125
0.1
0.01
0.1
1
Ic(A)
10 100
Si semiconductors 2013.1
2


Part Number MJE13009
Description TRANSISTOR
Maker SI Semiconductors
Total Page 4 Pages
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