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SI Semiconductors

MJE13009L Datasheet Preview

MJE13009L Datasheet

Low Voltage Series Transistors

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Shenzhen SI Semiconductors Co., LTD.
MJE LOW VOLTAGE SERIES TRANSISTORS
Product Specification
MJE13009L
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
APPLICATION: SUITABLE FOR 110V CIRCUIT MODE
FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
VALUE
400
200
9
20
80
150
-65-150
TO-220
UNIT
V
V
V
A
W
°C
°C
Electronic Characteristics Tc=25°C
CHARACTERISTICS
SYMBOL
Collector-Base Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
Collector-Emitter Saturation Voltage
Vces
Base-Emitter Saturation Voltage
DC Current Gain
Vbes
hFE
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=2.0A,IB=0.4A
IC=8.0A,IB=1.6A
IC=12.0A,IB=3.0A
IC=5.0A,IB=1.0A
VCE=5V,IC=10 mA
VCE=5V,IC=2.0 A
VCE=5V,IC=15.0 A
MIN
200
9
8
10
5
MAX
100
250
0.5
1.0
2.0
1.5
UNIT
A
A
V
V
V
V
40
Si semiconductors 2004.10
1




SI Semiconductors

MJE13009L Datasheet Preview

MJE13009L Datasheet

Low Voltage Series Transistors

No Preview Available !

Shenzhen SI Semiconductors Co., LTD.
MJE LOW VOLTAGE SERIES TRANSISTORS
Product Specification
MJE13009L
Ic(A)
100
SOA (DC)
10
1
0.1
0.01
1
hFE
100
10 100 Vce(V)1000
hFE - Ic
Tj=125
Tj=25
10 Tj= 40
%
120
100
80
60
40
20
0
0
Pc Tj
IS/B
Ptot
50 100 150 Tj( )200
hFE
100
hFE - Ic
Tj=125
Tj=25
Tj= 40
10
Vce=1.5V
1
0.01
0.1
1
Vces(v)
10
hFE=5
Vces - Ic
1
Ic(A)
10 100
Tj=125
Tj= 40
Tj=25
0.1
0.01
0.01
0.1
1
Ic(A)
10 100
Vce=5V
1
0.01
0.1
1
Vbes(v)
10
hFE=5
Vbes - Ic
10 Ic(A)100
1 Tj= 40
Tj=125
0.1
0.01
0.1
1
Tj=25
Ic(A)
10 100
Si semiconductors 2004.10
2


Part Number MJE13009L
Description Low Voltage Series Transistors
Maker SI Semiconductors
Total Page 3 Pages
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