SLN1N60C Datasheet N-Channel MOSFET

Manufacturer: SL SEMI

SLN1N60C n-channel mosfet by SL SEMI - Datasheet Preview

Datasheet Details

Part number	SLN1N60C
Manufacturer	SL SEMI
File Size	140.33 KB
Description	N-Channel MOSFET
Download	SLN1N60C Download (PDF)

General Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Overview

SLN1N60C 600V N-Channel MOSFET General.

Key Features

0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V.
Low gate charge ( typical 5.2nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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