SLN1N60C Key Features
- 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V
- Low gate charge ( typical 5.2nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
- Part: SLN1N60C
- Manufacturer: SL SEMI
- Size: 140.33 KB
SLN1N60C Description
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br...