Datasheet4U Logo Datasheet4U.com

SSP5N60 - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially exc

Features

  • 4.5A,600v,RDS(on)=2.5Ω@VGS=10V.
  • Gate charge (Typical 27nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability SSP5N60/SSF5N60C General.

📥 Download Datasheet

Datasheet preview – SSP5N60

Datasheet Details

Part number SSP5N60
Manufacturer SOURCESEMI
File Size 908.58 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSP5N60 Datasheet
Additional preview pages of the SSP5N60 datasheet.

📁 Similar Datasheet

  • SSP5N60A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSP5N70 - N-Channel Power MOSFET (Samsung Electronics)
  • SSP5N80 - (SSP5N70 / SSP5N80) N-Channel Power MOSFET (Samsung Electronics)
  • SSP5N80A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSP5N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSP5N90 - N-Channel Power MOSFET (Samsung)
  • SSP5N90A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSP-T - Surface Mount Quartz Crystal (ETC)
  • SSP-T5 - Surface Mount Quartz Crystal (ETC)
  • SSP-T7-F - SMD Quartz Crystal (Seiko)
Other Datasheets by SOURCESEMI

Full PDF Text Transcription

Click to expand full text
600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.
Published: |