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29DL32BF - MBM29DL32BF

General Description

The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

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Full PDF Text Transcription for 29DL32BF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 29DL32BF. For precise diagrams, and layout, please refer to the original PDF.

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-3E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation www.DataSheet4U.com MBM29DL32TF/BF-70 s DESCRIPTION The MBM29D...

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eration www.DataSheet4U.com MBM29DL32TF/BF-70 s DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL32TF/BF 70 VCC = 3.0 V 70 70 30 +0.6 V −0.

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