S29WS128P memory equivalent, burst simultaneous read/write mirrorbit flash memory.
* Single 1.8 V read/program/erase (1.70
–1.95 V)
* 90 nm MirrorBit™ Technology
* Simultaneous Read/Write operation with zero latency
* Rand.
requiring higher density, better performance and lowered power consumption.
Performance Characteristics
Read Access Tim.
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