4R3S Key Features
- Hyper Fast Recovery: 35nsec Maximum
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- Single Chip Construction
- Hermetically Sealed Package
- Metalurgically Bonded Construction
- TX, TXV, and S-Level Screening Available 2/
| Manufacturer | Part Number | Description |
|---|---|---|
Fuji Electric |
4R3TI20Y-080 | DIODE and TYRISTOR MODULE |
Fuji Electric |
4R3TI30Y-080 | DIODE and TYRISTOR MODULE |
Fuji Electric |
4R3TI60Y-080 | DIODE and TYRISTOR MODULE |