SFF11N80 - N-Channel Power MOSFET

Changed Trr 250ns to 550ns APPROVAL Rev C Check Box to Include on Web:

FORM# Q312 Rev.

• Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed, Isolated Package Ceramic Seal Package Available. Contact Factory TX, TXV, S-Level s.