SFF11N80 Description
Solid State Devices, Inc. 14830 Valley View Blvd La Mirada, Ca 90638 Phone: (562) 404-1773 ssdi@ssdi-power.
SFF11N80 Key Features
- Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stabilit
- Source Voltage Gate
- Source Voltage Continues Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance
- La Mirada, Ca 90638 Phone: (562) 404-7855
- Fax: (562) 404-1773 ssdi@ssdi-power
- ssdi-power
- (VDS > ID(on) x RDS(on) Max, ID = 5.5A) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time
- (IF = 11A, VGS = 0V) Diode Reverse Recovery Time (IF = 11A, di/dt = 100A/µsec) Input Capacitance Output Capacitance Reve
- Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory.