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SSDI

SFF130-5 Datasheet Preview

SFF130-5 Datasheet

N-Channel POWER MOSFET

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF130 __ __
│ └ Screening 2/
__ = Not Screen
Package
TX = TX Level
TXV = TXV Level
S = S Level
/5= TO-5
TO-5
SFF130/5
8 AMP / 100 Volts
0.18
N-Channel Power MOSFET
Features:
Rugged Construction with Poly Silicon Gate
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
Available in both hot case and isolated versions
Ideal for low power applications
TX, TXV, Space Level Screening Available 2/
Replacement for IRFF130 Types
Maximum Ratings 3/
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Thermal Resistance
Junction to Case
Single Pulse Avalanche Energy
NOTES:
1/ For Ordering Information, Price, Operating
Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Maximum
Ratings and Electrical Characteristics @25ºC.
TC = 25ºC
TC = 100ºC
TC = 25ºC
TA = 25ºC
Symbol
VDS
VGS
ID
PD
Top & Tstg
RθJC
EAS
TO-5 Case Outline:
Value
100
±20
8
5
25
19
-55 to +150
5
75
Units
Volts
Volts
Amps
Watts
ºC
ºC/W
mJ
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00019D
DOC
http://www.Datasheet4U.com/




SSDI

SFF130-5 Datasheet Preview

SFF130-5 Datasheet

N-Channel POWER MOSFET

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Temperature Coefficient of Breakdown Voltage
Drain to Source On State Resistance
(VGS=10 V )
ID=5A
ID=8A
Gate Threshold Voltage
(VDS=VGS, ID=250 µA )
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
(VDS=80% max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BVDSS
BVDSS
Tj
RDS(on)
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=10 Volts
50% rated VDS
Rated ID
VDD=50%
Rated VDS
ID = 8A
RG= 7.5
TJ=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
SFF130/5
Min Typ
100 ––
–– 100
––
2.0 2.8
0.13
0.14
37
––
––
––
––
12
1
3.8
––
––
––
––
–– 1
––
––
––
––
––
––
––
––
––
17
3.7
7.0
9.5
42
22
25
120
0.7
650
250
44
Max Units
–– Volts
––
0.18
0.21
4.0
mV/ ºC
V
–– mho
25
250
+100
-100
28
6.3
16.6
30
75
40
45
1.5
300
3
––
––
––
µA
nA
nC
nsec
V
nsec
nC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Number:
SFF130/5
PIN ASSIGNMENT (Standard)
Package Drain
TO-5
Pin 3
Source
Pin 1
Gate
Pin 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00019D
DOC
http://www.Datasheet4U.com/


Part Number SFF130-5
Description N-Channel POWER MOSFET
Maker SSDI
Total Page 2 Pages
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