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SSDI

SFF15N80-3 Datasheet Preview

SFF15N80-3 Datasheet

N-Channel POWER MOSFET

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SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER'S DATA SHEET
FEATURES:
• Low RDS (on) and High Transconductance
• Excellent High Temperature Stability
• Fast Switching Speed
• Intrinsic Rectifier
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
SFF15N80/3
15 AMPS
800 VOLTS
0.60 S
N-CHANNEL
POWER MOSFET
TO-3
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25oC
PACKAGE OUTLINE: TO-3
PIN OUT:
DRAIN: CASE
SOURCE: PIN 2
GATE: PIN 1
SYMBOL
VDSS
VGS
ID
Top & Tstg
R2JC
PD
VALUE
800
±20
15
-55 to +150
0.42
300
UNIT
Volts
Volts
Amps
oC
oC/W
Watts
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0006C
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SSDI

SFF15N80-3 Datasheet Preview

SFF15N80-3 Datasheet

N-Channel POWER MOSFET

No Preview Available !

SFF15N80/3
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
SYMBOL MIN TYP MAX UNIT
Drain to Source Breakdown Voltage
(VGS = 0 V, ID = 3mA)
Drain to Source ON State Resistance
(VGS = 10 V, ID = 7.5A)
BVDSS
800
-
-V
RDS(on)
-
- 0.65 S
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
VGS(th)
2.0
-
4.5 V
Zero Gate Voltage Drain Current
(VDS = 640V, VGS = 0V)
TA = 25oC
TA = 125oC
IDSS
-
-
-
-
250
1000
:A
Gate to Source Leakage Forward
(VGS = ±20V, VDS = 0V)
IGSS
-
- ±100 nA
Input Capacitance
VGS = 0 Volts
Ciss
3965
-
4870
Output Capacitance
VDS = 25 Volts Coss
315
-
395 pF
Reverse Transfer Capacitance
f =1 MHz
Crss
73
- 120
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
VDS = 400V
ID = 7.5A
Qg
Qgs
Qgd
- 128 155
- 30 45 nC
- 55 80
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VGS = 10V
VDD = 400V
ID = 7.5A
RG = 2 S
td (on)
tr
td (off)
tf
-
-
-
-
20 50
33
63
50
100
nsec
32 50
Diode Forvard Voltage
(IS = 15A, VGS = 0V, TJ = 25oC)
VSD -
- 1.50 V
IF = 15A,
Diode Reverse Recovery Time
VR = 100V
trr
-
- 800 nsec
di/dt = 100A/:sec
NOTES:
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Part Number SFF15N80-3
Description N-Channel POWER MOSFET
Maker SSDI
Total Page 2 Pages
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