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SFF24N50-3 Datasheet Preview

SFF24N50-3 Datasheet

N-Channel POWER MOSFET

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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
SFF24N50/3
SFF24N50/3T
24 AMP / 500 Volts
0.2
N-Channel
Power MOSFET
TO-3
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Avalanche Energy
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Notes:
1. P/N: SFF 24N50/3:
Pin Diameter : 0.043”
0.038”
2. P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
.135 MAX
Ø.875
MAX
.450
.250
Symbol
Repetitive
Repetitive
Single Pulse
VDS
VGS
ID
IAR
EAR
EAS
Top & Tstg
RθJC
PD
Value
500
±20
24
21
1
690
-55 to +150
0.75
(typ 0.6)
167
126
Units
Volts
Volts
Amps
Amps
mJ
ºC
ºC/W
WATTS
2x Ø..116551
SEATING PLANE
2x
.043
.038
.440
.420
2x
.225
.205
.525 MAX
.675
.655
2
1
2x R.188 MAX
2x .312 MIN
1.197
1.177
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
http://www.Datasheet4U.com/




SSDI

SFF24N50-3 Datasheet Preview

SFF24N50-3 Datasheet

N-Channel POWER MOSFET

No Preview Available !

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404 -1773
ssdi@ssdi-power.com * www.ssdi -power.com
SFF24N50/3
SFF24N50/3T
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=10 Volts
50% rated VDS
50% Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 6.2
VGS=10 Volts
TJ=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
Min
500
––
24
2.0
8
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
––
––
––
12
––
––
––
––
135
28
62
16
33
65
30
––
––
––
4200
450
135
Max
––
0.2
––
4.0
––
250
1000
+100
-100
180
40
85
30
45
130
40
1.5
500
––
––
––
––
Units
Volts
A
V
mho
µA
nA
nC
nsec
V
nsec
nC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
http://www.Datasheet4U.com/


Part Number SFF24N50-3
Description N-Channel POWER MOSFET
Maker SSDI
Total Page 2 Pages
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