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SSDI
SSDI

SFF25P20 Datasheet Preview

SFF25P20 Datasheet

P-Channel MOSFET

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SFF25P20 pdf
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SFF25P20 ___ ___
│ └ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package 2/
S2I = SMD2 Isolated
M = TO-254
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
SFF25P20 Series
25 AMP / 200 Volts
150 mtypical
P-Channel MOSFET
Features:
polySi gate cell structure
Low ON-resistance
UIS (unclamped inductive switching) rated
Hermetically Sealed, Isolated Package
Low package inductance
Stress relief provided by flexible leads –
several options available
Improved (RDS(ON) QG) figure of merit
TX, TXV, S-Level screening available
Continuous
transient
@ TC = 25ºC
@ TC = 25ºC
@ TC = 25ºC
Junction to Case
Symbol
VDSS
VGS
ID1
ID3
IAR
EAR
PD
TOP & TSTG
R0JC
Value
-200
±20
±30
25
95
25
30
250
-55 to +150
0.83
0.6 typical
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
1/ For ordering information, price, operating curves, and
availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, all electrical characteristics
@25ºC.
SMD 2 Isolated
TO-254
NOTE: SEE DASH# DEFINITION TABLE
FOR AVAILABLE LEAD FORMING
CONFIGURATION
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC



SSDI
SSDI

SFF25P20 Datasheet Preview

SFF25P20 Datasheet

P-Channel MOSFET

No Preview Available !

SFF25P20 pdf
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF25P20
series
Electrical Characteristics (@25oC, unless otherwise specified)
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250μA
VGS
VGS
=
=
10V,
10V,
ID
ID
=
=
12A,
25A,
Tj=
Tj=
25oC
25oC
VDS = VGS, ID = 250μA
BVDSS
RDS(on)
VGS(th)
200 –– ––
–– 125 150
–– 150 ––
3.0 –– 5.0
V
m
V
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = ±20V
VVDSDS==11606V0V, ,VVGSGS==0V0V, ,TTj =j =12255ooCC
VDS = 10V, ID = 24A, Tj = 25oC
VGS = 10V
VDS = 100V
ID = 12A
VGS = 10V
VDS = 100V
ID = 12A
RG = 4.7
IF = 25A, VGS = 0V
IF = 24A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
NOTES: Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Ciss
Coss
Crss
–– –– ±100 nA
–– –– 25
μA
–– –– 1 mA
5 12 –– Mho
–– 150
–– 35
–– 70
––
––
nC
–– 35 ––
––
––
30
70
––
––
nsec
–– 30 ––
–– 2.0 3.0
V
–– 250 –– nsec
–– 4200 ––
–– 850 ––
–– 350 ––
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC


Part Number SFF25P20
Description P-Channel MOSFET
Maker SSDI
Total Page 3 Pages
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