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SFF25P20S2I - N-Channel Power MOSFET

Key Features

  • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads.
  • several options available Improved (RDS(ON) QG) figure of merit TX TXV S Level screening available.

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Datasheet Details

Part number SFF25P20S2I
Manufacturer SSDI
File Size 154.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF25P20S2I Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20S2I series 25 AMP / 200 Volts 125 mΩ P-Channel MOSFET Features: • • • • • • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX TXV S Level screening available DESIGNER’S DATA SHEET SMD 2 isolated NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION • • Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max.