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SFL3200-39 Datasheet Preview

SFL3200-39 Datasheet

N-Channel POWER MOSFET

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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
Rugged Construction
Low RDS(on) and high transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
TX, TXV and Space Level Screening Available
SFL3200/39
Logic Level
12A 150V .17
N-Channel Power MOSFET
TO-39
Maximum Ratings
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Peak Drain Current TC = 25 °C 1/
Operating and Storage Temperature
Thermal Resistance Junction to Case
Total Device Dissipation @ TC = 25 °C
Total Device Dissipation @ TA = 25 °C
Package Outline: TO-39 (JEDEC)
PIN OUT:
PIN 1: Source
PIN 2: Gate
Pin 3: Drain
Symbol
V DS 150
VGS
ID
IP 35
Top & Tstg
RθJC 11.5
PD
Value
+16
9.3
-55 to 175
13
1.2
Unit
Volts
Volts
Amps
Amps
ºC
ºC/W
Watts
Note:
1/ Peak Drain Current Limited by Package Lead Wire
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0007A
http://www.Datasheet4U.com/




SSDI

SFL3200-39 Datasheet Preview

SFL3200-39 Datasheet

N-Channel POWER MOSFET

No Preview Available !

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µΑ)
Drain to Source On State Resistance (VGS=10 V, ID=5 A)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=5V)
Gate Threshold Voltage (VDS=VGS, ID=250µΑ)
Forward Transconductance (VDS>ID(on) x Max, IDS=5A)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VGS=10 Volts
80% rated VDS
ID=9A
VDD=50%
Rated VDS
RG=15
ID=7.2A
Diode Forward Voltage (VGS=0 V, TJ=25ºC) IS=7.2A
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
TJ=150ºC
IF=7.2A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
F=1 MHz
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
Trr
QRR
Ciss
Coss
Crss
SFL3200/39
Min
150 ––
–– .
12 ––
1 ––
8.35 6
Typ
16
––
––
––
––
––
––
––
––
––
––
––
–– ––
––
––
––
––
––
––
––
––
––
––
––
––
2.4
45
38
36
160
8.1
775
140
70
Max Units
–– Volts
.17
–– A
2V
–– mho
25
250
100
-100
35
4.1
21
––
––
––
––
1.33
240
––
––
––
––
µA
nA
nC
nsec
V
nsec
nC
pF
http://www.Datasheet4U.com/


Part Number SFL3200-39
Description N-Channel POWER MOSFET
Maker SSDI
Total Page 2 Pages
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