Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available
Logic Level 12A 150V .17Ω N-Channel Power MOSFET
TO-39
Symbol Value Unit
Max.
Full PDF Text Transcription for SFL3200-39 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SFL3200-39. For precise diagrams, and layout, please refer to the original PDF.
SFL3200/39 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DES...
View more extracted text
855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • • • • • • • • • Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available Logic Level 12A 150V .17Ω N-Channel Power MOSFET TO-39 Symbol Value Unit Maximum Ratings Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Peak Drain Current TC
SFL3200-39 Datasheet
