Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage
Temperature Coefficient
Drain to Source On State Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFRC9130S.5B
Symbol Min Typ Max Units
VGS = 0V, ID =0.25 mA BVDSS
-100 –– ––
V
VGS = 0V, ID =0.25 mA dBVDSS/dT
VGS = 10V, ID = 5A, Tj= 25oC
VGS = 10V, ID = 10A, Tj= 25oC
RDS(on)
VDS = 5 V, ID = 250µA VGS(th)
––
––
––
-2.0
-0.1 ––
240 300
300 ––
–– -4.0
V/ oC
mΩ
V
VGS = ±20V
VDS = -100V, VGS = 0V, Tj = 25oC
VDS = -80V, VGS = 0V, Tj = 125oC
VDS = 40V, ID = 5A, Tj = 25oC
VGS = 10V
VDS = 80V
ID = 10A
VGS = 10V
VDS = 50V
ID = 10A
RG = 12Ω
IF = 10A, VGS = 0V
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
–– 5 ±100 nA
–– 0.01 10
–– 1 100
µA
µA
4 5.2 –– Mho
–– 30
–– 5.5
–– 1.5
38
––
––
nC
–– 15 35
––
––
25
45
55
100
nsec
–– 25 60
–– 2.00 4.00 V
IF = 10A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
trr
Qrr
Ciss
Coss
Crss
––
120 350
0.55 2.5
nsec
µC
–– 800 1035
–– 160 240
–– 60 90
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A
DOC
