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SFRC9130S.5B Datasheet Preview

SFRC9130S.5B Datasheet

Radiation Tolerant P-Channel MOSFET

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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
POWERShieldTM
Technology
PS-Hard Radiation Hardened MOSFETs
SFRC9130
__ B__
│ └ Screening 2/ __ = Commercial
TX = TX Level
TXV = TXV Level
S = S Level
Package: S.5 = SMD.5
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
PACKAGE OUTLINE:
SMD.5
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
.408
.392
.304
.288
.304
.288
SFRC9130S.5B
10 AMP /100 Volts
300 m
Radiation Tolerant
P-Channel MOSFET
Features:
Advanced POWERShieldTM Technology
TID 100K Rad
Excellent high temperature stability
Hermetically Sealed Power Package
Low Total Gate Charge
Fast Switching
Replacement for IRHNJ9130 and F9130 types
@ TC = 25ºC
@ TC = 100ºC
@ L= 5.0 mH
@ L= 5.0 mH
@ L= 5.0 mH
@ TC = 25ºC
Symbol
VDSS
VGS
ID1
ID2
IAR
EAR
EAS
PD
TOP & TSTG
R0JC
Value
-100
±20
10
7
9.8
5.2
320
75
-55 to +150
1.65
Units
V
V
A
A
mJ
mJ
W
ºC
ºC/W
3x
.020
.010
.030 MIN
2x
.103
.087
.030 MIN
.128
.112
.233
.217
.145
.115
2x .010
MAX
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A
DOC




SSDI

SFRC9130S.5B Datasheet Preview

SFRC9130S.5B Datasheet

Radiation Tolerant P-Channel MOSFET

No Preview Available !

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage
Temperature Coefficient
Drain to Source On State Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFRC9130S.5B
Symbol Min Typ Max Units
VGS = 0V, ID =0.25 mA BVDSS
-100 –– ––
V
VGS = 0V, ID =0.25 mA dBVDSS/dT
VGS = 10V, ID = 5A, Tj= 25oC
VGS = 10V, ID = 10A, Tj= 25oC
RDS(on)
VDS = 5 V, ID = 250µA VGS(th)
––
––
––
-2.0
-0.1 ––
240 300
300 ––
–– -4.0
V/ oC
m
V
VGS = ±20V
VDS = -100V, VGS = 0V, Tj = 25oC
VDS = -80V, VGS = 0V, Tj = 125oC
VDS = 40V, ID = 5A, Tj = 25oC
VGS = 10V
VDS = 80V
ID = 10A
VGS = 10V
VDS = 50V
ID = 10A
RG = 12
IF = 10A, VGS = 0V
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
–– 5 ±100 nA
–– 0.01 10
–– 1 100
µA
µA
4 5.2 –– Mho
–– 30
–– 5.5
–– 1.5
38
––
––
nC
–– 15 35
––
––
25
45
55
100
nsec
–– 25 60
–– 2.00 4.00 V
IF = 10A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
trr
Qrr
Ciss
Coss
Crss
––
120 350
0.55 2.5
nsec
µC
–– 800 1035
–– 160 240
–– 60 90
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A
DOC


Part Number SFRC9130S.5B
Description Radiation Tolerant P-Channel MOSFET
Maker SSDI
Total Page 2 Pages
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