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SSDI

SFT10000-3 Datasheet Preview

SFT10000-3 Datasheet

NPN DARLINGTON TRANSISTOR

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PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
APPLICATION NOTES:
SFT10000 Darlington Transistor is direct replacement of Motorolla
MJ 10000. It is designed for high voltage, high speed, power switch-
ing in inductive circuits where fall time is critical. It is particularly
suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drives
• Motor Controls
• Deflection Cirsuits.
SFT10000/3
20 AMP
350 VOLTS
NPN DARLINGTON
TRANSISTOR
TO-3
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Continuous
Peak
@ TC = 25oC
@ TC = 100oC
SYMBOL
VCEO
VCEV
VEB
IC
ICM
IB
PD
TJ, TSTG
R 2 JC
VALUE
350
450
8
20
30
2.5
175
100
1
-65 to +200
1
UNITS
Volts
Volts
Volts
Amps
Amps
W
W
W/oC
oC
oC/W
CASE OUTLINE: TO-3
Pin Out:
1 - Collector
2 - Base
3 - Emmiter
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011A
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SSDI

SFT10000-3 Datasheet Preview

SFT10000-3 Datasheet

NPN DARLINGTON TRANSISTOR

No Preview Available !

SFT10000/3
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 250mA, IB = 0, VCLAMP = Rated VCEO)
Collector-Emitter Sustaining Voltage
(VCLAMP = Rated VCEX, TC = 100oC)
Collector Cutoff Current
(VCE = Rated Value, VBE(off) = 1.5VDC)
Collector Cutoff Current
(VCEV = Rated VCEV, RBE = 50S, TC = 100oC)
Emitter Cutoff Current
(VEB = 8VDC, IC = 0)
DC Current Gain*
(VCE = 5VDC)
IC = 2 A
IC = 10 A
TC = 25oC
TC = 100oC
IC = 5ADC
IC = 10ADC
Collector-Emitter Saturation Voltage*
IC = 10ADC, IB = 400mADC, TC = 25oC
IC = 20ADC, IB = 1ADC, TC = 25oC
IC = 10ADC, IB = 400mADC, TC = 100oC
Base-Emitter Saturation Voltage*
(IC = 10ADC, IB = 400mADC)
TC = 25oC
TC = 100oC
Diode Forward Voltage
(IF = 10ADC)
Small Signal Current Gain
(IC = 1ADC , VCE = 10VDC, f = 1MHz)
Output Capacitance
(VCB= 30VDC , IE = 0ADC, f = 2.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 250VDC , IC = 10ADC,
IB1 = 400mADC, VBE(off) = 5VDC
tP = 50:sec, Duty Cycle # 2%
Storage Time
Crossover Time
IC = 10A(pk), VCLAMP = Rated VCEX,
IB1 = 400mA, VBE(off) = 5VDC, TC = 100oC
*Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
SYMBOL
VCEO(sus)
VCEX(sus)
ICBO
ICEV
IEBO
HFE
VCE(SAT)
VBE (SAT)
VF
HFE
Cob
td
tr
ts
tf
tsv
tc
MIN
350
400
275
-
-
-5
-
50
40
MAX UNITS
- VDC
-
-
VDC
0.25
5.0
mADC
mADC
150 mADC
600
400
-
-
1.9
3.0
VDC
- 2.0
-
-
2.5
2.5
VDC
- 5.0 VDC
10 -
100 325
pf
- 0.2 :s
- 0.6 :s
- 3.5 :s
- 2.4 :s
- 5.5 :s
- 3.7 :s
http://www.Datasheet4U.com/


Part Number SFT10000-3
Description NPN DARLINGTON TRANSISTOR
Maker SSDI
Total Page 2 Pages
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