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SSDI

SFT5333 Datasheet Preview

SFT5333 Datasheet

HIGH SPEED PNP TRANSISTOR

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PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Radiation Tolerant
• Fast Switching, 150ns MAX t(on)
• High Frequency, fT 85MHz MIN.
• BVCEO 70Volts MIN.
• Low Saturation Voltage.
• 200oC Operating, Gold Eutectic Die Attach.
• Designed for Complementary Use with SFT4300.
SFT5333
2 AMP
100 VOLTS
HIGH SPEED
PNP TRANSISTOR
TO-5
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC=100oC
Derate above 100oC
Operating and Storage Temperature
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
VALUE
70
100
6
2
1
6.6
66
-65 to +200
UNITS
Volts
Volts
Volts
Amps
Amps
W
mW/oC
oC
Thermal Resistance, Junction to Case
RθJC
15.2 oC/W
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 30 mADC)
Collector-Base Breakdown Voltage
(IC = 200 µADC)
Emitter-Base Breakdown Voltage
(IE = 200 µADC)
Collector Cutoff Current
(VCB =90VDC, TC =25oC)
(VCB =90VDC, TC =100oC)
Collector Cutoff Current
(VCE = 40 VDC)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
ICEO
MIN
70
100
6
-
-
MAX
-
-
-
1
75
5
DATA SHEET #: TR0002C
UNITS
Volts
Volts
Volts
µA
µA
µA




SSDI

SFT5333 Datasheet Preview

SFT5333 Datasheet

HIGH SPEED PNP TRANSISTOR

No Preview Available !

SFT5333
ELECTRICAL CHARACTERISTICS
Emitter Cutoff Current
(VEB = 6VDC)
DC Current Gain *
(IC = 1.0 ADC , VCE = 5 VDC)
(IC = 2.0 ADC , VCE = 5 VDC)
Collector-Emitter Saturation Voltage *
(IC = 1.0 ADC , IB =100 mADC)
(IC = 2.0ADC , IB = 200 mADC)
Base-Emitter Voltage *
(IC = 2.0 ADC , VCE = 4 VDC)
Current Gain Bandwidth Product
(IC =1.0 ADC , VCE =10 VDC, f =10MHz)
Output Capacitance
(VCB = 30VDC , IE = 0ADC, f =1.0MHz)
Input Capacitance
(VBE = 6VDC , IC = 0ADC, f =1.0MHz)
Turn On Time
Turn Off Time
(VCC =20VDC , IC =1.0ADC,
VEB(OFF)=3.7VDC,
IB1=IB2=100mADC, RL=20 Ohms)
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
CASE OUTLINE: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SYMBOL
MIN MAX UNITS
IEBO
- 1 µA
HFE
VCE (SAT)
VBE (ON)
4 0 250
40
-
-
0.45
1.0
Volts
- 1.5 Volts
fT 85 - MHz
Cob - 75 pF
Cib - 300 pF
t(on) - 150 ns
t(off) - 450 ns


Part Number SFT5333
Description HIGH SPEED PNP TRANSISTOR
Maker SSDI
Total Page 2 Pages
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