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SFT6036 Datasheet Preview

SFT6036 Datasheet

4 AMP PNP Darlington Power Transistor

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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information1/
SFT6036 __ __
│ └ Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package /5 = TO-5
M = TO-254
J = TO-257
S.3 = SMD.3
S.5 = SMD.5
Maximum Ratings3/
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 100ºC
Operating & Storage Temperature
Thermal Resistance
(Junction to Case)
TO-5 (/5)
TO-254 (M)
SFT6036 series
4 AMP
PNP Darlington Power Transistor
80 Volts
Features:
BVCEO to 80 Volts
Low saturation voltage
Very low leakage
200oC operating temperature
Gold eutectic die attach
Complement for SFT6039
Available with TO-5, TO-254, TO-257, SMD.3
and SMD.5 Cases
TX, TXV, and S Level Screening Available2/
TO-5
TO-254
TO-257
SMD.3
SMD.5
TO-5
TO-254
TO-257
SMD.3
SMD.5
Symbol
VCEO
VCBO
VEBO
IC cont
IC pk
IB
PD
TJ & TSTG
R0JA
R0JC
R0JC
R0JC
R0JC
TO-257 (J)
Values
80
80
5
4
8
0.1
-
20
20
28.5
31
-65 to 200
175
5
5
3.5
3.2
Units
Volts
Volts
Volts
Amps
Amps
Watts
ºC
ºC/W
SMD.3 (S.3) SMD.5 (S.5)
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0120A
DOC




SSDI

SFT6036 Datasheet Preview

SFT6036 Datasheet

4 AMP PNP Darlington Power Transistor

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT6036 series
Electrical Characteristics3/
Symbol Min Typ Max
Collector – Emitter Breakdown Voltage*
IC = 100 mA BVCEO
80
95
-
Collector – Emitter Cutoff Current,
VCE = 80V, IB = 0
ICEO
- 0.05 100
Collector – Emitter Cutoff Current
VCE = 80V, VBE (off)= 1.5V
VCE = 80V, VBE (off)= 1.5V, TC= 125ºC
ICEX
- 0.05 100
- 12.5 500
Collector Cutoff Current
VCB = 80V
ICBO
- 0.05 500
Emitter Cutoff Current
(VBE = 5V)
IEBO
0.65 2
DC Current Gain*
(IC = 0.5A, VCE = 3V)
(IC = 2A, VCE = 3V)
(IC = 4A, VCE = 3V)
HFE
500 4,000
-
750 3,800 15,000
100 900
-
Collector-Emitter Saturation
Voltage*
IC = 2A, IB = 8mA VCE (SAT)1
-
1.1
2
IC = 4A, IB = 40mA VCE (SAT)2
-
1.6
3
Base-Emitter Saturation
Voltage*
IC = 4A, IB = 40mA VBE (SAT)2
-
2.25
4
Base-Emitter Voltage
IC = 2A, VCE = 3V VBE (ON) - 1.65 2.8
Small Signal Current Gain
IC = 0.75A, VCE = 10V, f = 1MHz
hfe
25 1400
-
Output Capacitance
VCB = 15V, IE = 0A, f = 2.0MHz
Cob
- 40 200
Electrical Characteristics3/
Symbol
Typical
Delay Time
Rise Time
Storage Time
Fall Time
VCC= -30V
IC= 4A
IB1 = IB2 = 16mA
td
tr
ts
tf
45
200
600
450
Units
Volts
uA
uA
uA
mA
V
V
V
pF
Units
ns
ns
ns
ns
Notes: * Pulse Test: Pulse Width = 300 μs. Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
PIN ASSIGNMENT (Standard)
Package
Collector Emitter
TO-5 (/5)
TO-254(M)
TO-257(J)
31
12
12
SMD.3 (S.3) 1 2
SMD.5 (S.5) 1 2
Base
2
3
3
3
3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0120A
DOC


Part Number SFT6036
Description 4 AMP PNP Darlington Power Transistor
Maker SSDI
Total Page 4 Pages
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