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SFT6039 Datasheet Preview

SFT6039 Datasheet

4 AMP NPN Darlington Power Transistor

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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT6039 __ __
│ └ Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package /5 = TO-5
M = TO-254
J = TO-257
S.3 = SMD.3
S.5 = SMD.5
Maximum Ratings3/
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 100ºC
Operating & Storage Temperature
Thermal Resistance
(Junction to Case)
TO-5 (/5)
TO-254 (M)
SFT6039 series
4 AMP
NPN Darlington Power Transistor
80 Volts
Features:
BVCEO to 80 Volts
Low saturation voltage
Very low leakage
200oC operating temperature
Gold eutectic die attach
Complement for SFT6036
Available with TO-5, TO-254, TO-257, SMD.3
and SMD.5 Cases
TX, TXV, and S Level Screening Available2/
TO-5
TO-254
TO-257
SMD.3
SMD.5
TO-5
TO-254
TO-257
SMD.3
SMD.5
Symbol
VCEO
VCBO
VEBO
IC cont
IC pk
IB
PD
TJ & TSTG
R0JC
TO-257 (J)
Values
80
80
5
4
8
0.1
-
20
20
28.5
31
-65 to 200
175
5
5
3.5
3.2
Units
Volts
Volts
Volts
Amps
Amps
Watts
ºC
ºC/W
SMD.3 (S.3) SMD.5 (S.5)
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0121A
DOC




SSDI

SFT6039 Datasheet Preview

SFT6039 Datasheet

4 AMP NPN Darlington Power Transistor

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT6039 series
Electrical Characteristics3/
Symbol Min Typ Max Units
Collector – Emitter Breakdown Voltage*
IC = 100mA BVCEO
80
95
- Volts
Collector – Emitter Cutoff Current,
VCE = 80V, IB= 0
ICEO
- 0.05 100
uA
Collector – Emitter Cutoff
Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain*
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation
Voltage*
Base-Emitter Voltage
Small Signal Current Gain
Output Capacitance
Electrical Characteristics3/
Delay Time
Rise Time
Storage Time
Fall Time
VCE = 80V, VBE (off)= 1.5V
VCE = 80V, VBE (off)= 1.5V, TC= 125ºC
ICEX
VCB = 80V
ICBO
VBE = 5V
IEBO
IC = 0.5A, VCE = 3V
IC = 2A, VCE = 3V
IC = 4A, VCE = 3V
HFE
IC = 2A, IB = 8mA VCE (SAT)1
IC = 4A, IB = 40mA VCE (SAT)2
IC = 4A, IB = 40mA VBE (SAT)2
IC = 2A, VCE = 3V VBE (ON)
IC = 0.75A, VCE = 10V, f = 1MHz
hfe
VCB = 15V, IE = 0A, f = 2.0MHz Cob
Symbol
VCC= -30 V
IC= 4 A
IB1 = IB2 = 16 mA
td
tr
ts
tf
- 0.05 100
- 12.5 500
- 0.05 500
0.80 2
500 4,000
-
750 10,000 15,000
100 6000
-
- 1.2 2
- 2.0 3
- 2.2 4
- 1.65 2.8
25 400
-
- 30 100
Typical
90
320
1100
1600
uA
uA
mA
V
V
V
pF
Units
ns
ns
μs
ns
Notes: * Pulse Test: Pulse Width = 300 μs. Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
PIN ASSIGNMENT (Standard)
Package
Collector Emitter
TO-5 (/5)
TO-254(M)
TO-257(J)
SMD.3 (S.3)
SMD.5 (S.5)
3
1
1
1
1
1
2
2
2
2
Base
2
3
3
3
3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0121A
DOC


Part Number SFT6039
Description 4 AMP NPN Darlington Power Transistor
Maker SSDI
Total Page 4 Pages
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