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29EE512 Datasheet SST29EE512

Manufacturer: SST

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Datasheet Details

Part number 29EE512
Manufacturer SST
File Size 265.94 KB
Description SST29EE512
Datasheet download datasheet 29EE512 Datasheet

General Description

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST29EE512/29LE512/29VE512 write with a single power supply.

Overview

512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 /.

Key Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST29EE512.
  • 3.0-3.6V for SST29LE512.
  • 2.7-3.6V for SST29VE512.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption.
  • Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
  • Standby Current: 10 µA (typical).
  • Fast Page-Write Operation.
  • 128 Bytes per Pag.

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