SST31LF043A
FEATURES
:
- Monolithic Flash + SRAM bo Memory
- SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM
- SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM
- Single 3.0-3.6V Read and Write Operations
- Concurrent Operation
- Read from or write to SRAM while Erase/Program Flash
- Superior Reliability
- Endurance: 100,000 Cycles (typical) ..
- Greater than 100 years Data Retention
- Low Power Consumption:
- Active Current: 10 m A (typical) for Flash and 20 m A (typical) for SRAM Read
- Standby Current: 10 µA (typical)
- Flash Sector-Erase Capability
- Uniform 4 KByte sectors
- Latched Address and Data for Flash
- Fast Read Access Times:
- SST31LF041/043 Flash: 70 ns SRAM: 70 ns
- SST31LF041A/043A Flash: 300 ns SRAM: 300 ns
- Flash Fast Erase and Byte-Program:
- Sector-Erase Time: 18 ms (typical)
- Bank-Erase Time: 70 ms (typical)
- Byte-Program Time: 14 µs (typical)
- Bank Rewrite Time: 8 seconds (typical)
- Flash Automatic Erase and Program Timing
- Internal VPP Generation
- Flash End-of-Write Detection...
