SST31LF043A Overview
Key Features
- Single 3.0-3.6V Read and Write Operations
- Concurrent Operation – Read from or write to SRAM while Erase/Program Flash
- Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
- Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical)
- Flash Sector-Erase Capability – Uniform 4 KByte sectors
- Latched Address and Data for Flash
- Fast Read Access Times: – SST31LF041/043 Flash: 70 ns SRAM: 70 ns – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns
- Flash Automatic Erase and Program Timing – Internal VPP Generation
- Flash End-of-Write Detection – Toggle Bit – Data# Polling
- CMOS I/O Compatibility
