SST36VF1602E, SST36VF1601E Datasheet - SST

SST36VF1602E (SST36VF1601E / SST36VF1602E) 16 Mbit (x8/x16) Concurrent SuperFlash

The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compare.

SST36VF1602E Features

* Organized as 1M x16 or 2M x8

* Dual Bank Architecture for Concurrent Read/Write Operation

* 16 Mbit Bottom Sector Protection - SST36VF1601E: 12 Mbit + 4 Mbit

* 16 Mbit Top Sector Protection - SST36VF1602E: 4 Mbit + 12 Mbit

* Single 2.7-3.6V for Read and Wri

SST36VF1601E_SST.pdf

SST36VF1602E Datasheet Preview — This datasheet PDF includes multiple part numbers: SST36VF1602E, SST36VF1601E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SST36VF1602E, SST36VF1601E

Manufacturer:

SST

File Size:

445.12 KB

Description:

(sst36vf1601e / sst36vf1602e) 16 mbit (x8/x16) concurrent superflash.

Note:

This datasheet PDF includes multiple part numbers: SST36VF1602E, SST36VF1601E.
Please refer to the document for exact specifications by model.

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TAGS

SST36VF1602E SST36VF1601E SST36VF1601E SST36VF1602E Mbit x16 Concurrent SuperFlash SST

SST36VF1602E Distributor