10LN80K5 - N-channel Power MOSFET

Datasheet Summary

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

Order code STD10LN80K5 VDS 800 V RDS(on) max. ID 0.63 Ω 8A Figure 1: Internal schematic diagram.
Industry’s lowest RDS(on) x area.
Industry’s best FoM (figure of merit).
Ultra-low gate charge.
100% avalanche tested.
Zener-protected.

STMicroelectronics

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Datasheet Details

Part number	10LN80K5
Manufacturer	STMicroelectronics
File Size	837.77 KB
Description	N-channel Power MOSFET
Datasheet	10LN80K5 Datasheet
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STD10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD10LN80K5 VDS 800 V RDS(on) max. ID 0.63 Ω 8A Figure 1: Internal schematic diagram  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Order code STD10LN80K5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Published: Jan 25, 2021 |