10LN80K5 Datasheet - STMicroelectronics

10LN80K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: .

10LN80K5 Features

* Order code STD10LN80K5 VDS 800 V RDS(on) max. ID 0.63 Ω 8A Figure 1: Internal schematic diagram

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching applica

10LN80K5-STMicroelectronics.pdf