10N3L Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. PowerFLAT™ 3.3x3.3 Figure.
10N3L Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses