10NM60N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Part: 10NM60N
- Manufacturer: STMicroelectronics (official site)
- Size: 580.87 KB
Other 10NM60N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
10NM60 | N-Channel MOSFET |
|
Unisonic Technologies |
10NM60-U2 | N-Channel MOSFET |
10NM60N Description
6 Order code These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.