112N65M5 Datasheet | STMicroelectronics

Features Order code VDS at TJ max. STY112N65M5 710 V - Extremely low RDS(on) - Low gate charge and input capacitance - Excellent switching performance - 100% avalanche tested Applications - Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology bined with the well-known Power MESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. AM01475v1_no Zen Product status link STY112N65M5 Product summary Order code STY112N65M5 Marking Package Max247 Packing Tube DS6035 - Rev 4 - July 2022 For further information contact your local STMicroelectronics sales office. .st. STY112N65M5 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C...