Datasheet4U Logo Datasheet4U.com

11NK100Z - STW11NK100Z

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type VDSS (@Tjmax) RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatibility.

📥 Download Datasheet

Datasheet preview – 11NK100Z

Datasheet Details

Part number 11NK100Z
Manufacturer STMicroelectronics
File Size 287.24 KB
Description STW11NK100Z
Datasheet download datasheet 11NK100Z Datasheet
Additional preview pages of the 11NK100Z datasheet.

📁 Similar Datasheet

  • 11N06LT - PHB11N06LT (NXP Semiconductors)
  • 11N120CN - HGTG11N120CN (Fairchild Semiconductor)
  • 11N40C - FQP11N40C (Fairchild Semiconductor)
  • 11N50 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 11N50-CB - N-CHANNEL MOSFET (UTC)
  • 11N50E - PowerMOS transistors (Philips)
  • 11N50K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 11N60 - N-Channel MOSFET (Fairchild Semiconductor)
  • 11N60C2 - Power Transistor (Infineon)
  • 11N60C3 - Power Transistor (Infineon Technologies)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STW11NK100Z STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type VDSS (@Tjmax) RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Published: |