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STMicroelectronics Electronic Components Datasheet

11NM80 Datasheet

STF11NM80

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STP11NM80 - STF11NM80
STB11NM80 - STW11NM80
N-CHANNEL 800V - 0.35 - 11 A TO-220 /FP/D2PAK/TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on) RDS(on)*Qg ID
STP11NM80
STF11NM80
STB11NM80
STW11NM80
800 V
800 V
800 V
800 V
< 0.40
< 0.40
< 0.40
< 0.40
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
11 A
11 A
11 A
11 A
TYPICAL RDS(on) = 0.35
LOW GATE INPUT RESISTANCE
LOW INPUT CAPACITANCE AND GATE
CHARGE
BEST RDS(on)*Qg IN THE INDUSTRY
DESCRIPTION
The MDmesh™ associates the Multiple Drain pro-
cess with the Company’s PowerMesh™ horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar competi-
tion’s products.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Table 2: Order Codes
SALES TYPE
STP11NM80
STF11NM80
STB11NM80T4
STW11NM80
MARKING
P11NM80
F11NM80
B11NM80
W11NM80
PACKAGE
TO-220
TO-220FP
D2PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
October 2005
Rev. 2
1/14
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STMicroelectronics Electronic Components Datasheet

11NM80 Datasheet

STF11NM80

No Preview Available !

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = 2.5A, VDD = 50 V)
Value
TO-220/D2PAK
TO-247
800
800
± 30
11
4.7
44
150
1.2
TO-220FP
11 (*)
4.7 (*)
44 (*)
35
0.28
-65 to 150
Unit
V
V
V
A
A
A
W
W /°C
°C
TO-220/D2PAK
TO-247
0.83
62.5
300
TO-220FP
3.6
Unit
°C/W
°C/W
°C
Max Value
2.5
400
Unit
A
mJ
2/14
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Part Number 11NM80
Description STF11NM80
Maker ST Microelectronics
Total Page 14 Pages
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