11NM80
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
