12A120K5 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STH12N120K5-2AG 1200 V 1.9 Ω 7A - AEC-Q101 qualified - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested G(1) S(2, 3) Applications - Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH12N120K5-2AG Product summary Order code STH12N120K5-2AG Marking Package H²PAK-2 Packing Tape and reel DS14124 - Rev 1 - October 2022 For further information contact your local STMicroelectronics sales office. .st. STH12N120K5-2AG Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter...