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13005E - High voltage fast-switching NPN power transistor

Download the 13005E datasheet PDF. This datasheet also covers the 13005A variant, as both devices belong to the same high voltage fast-switching npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

production data 3

Key Features

  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (13005A-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
13005EC NPN SILICON TRANSISTOR Unisonic Technologies
13005A NPN SILICON TRANSISTOR ETC
13005BA NPN SILICON TRANSISTOR Unisonic Technologies
13005D NPN power transistor Jingdao
13005DL NPN power transistor Jingdao

Other Datasheets by STMicroelectronics

Part Number Description
13005A High voltage fast-switching NPN power transistor
13005C High voltage fast-switching NPN power transistor
13005D High voltage fast-switching NPN power transistor
13005F High voltage fast-switching NPN power transistor
13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking(1) Package Packaging ST13005 13005 A 13005 C 13005 D 13005 E 13005 F TO-220 Tube 1.