130N4LF7 Datasheet | STMicroelectronics

Features Order code STK130N4LF7AG V DS 40 V RDS(on) max. 3.0 mΩ - AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications ID 100 A G(4) Description S(1, 2, 3) This N-channel Power MOSFET utilizes STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G4S123DTAB_LFPAK Product status link STK130N4LF7AG Product summary Order code STK130N4LF7AG Marking Package LFPAK 5x6 Packing Tape and reel DS12961 - Rev 4 - September 2021 For further information contact your local STMicroelectronics sales office. .st. STK130N4LF7AG Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source...