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13NM60N - N-Channel MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – 13NM60N

Datasheet Details

Part number 13NM60N
Manufacturer STMicroelectronics
File Size 556.23 KB
Description N-Channel MOSFET
Datasheet download datasheet 13NM60N Datasheet
Additional preview pages of the 13NM60N datasheet.

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Full PDF Text Transcription

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STF13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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