150N3LLH6 Overview
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" OR ' Table.
150N3LLH6 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Switching