180N10F3 mosfet equivalent, n-channel power mosfet.
Order code
VDS
STH180N10F3-2
100 V
* Ultra low on-resistence
* 100% avalanche tested
RDS(on) max. 4.5 mΩ
ID 180 A
Applications
* Switching application.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET F3 technolog.
This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2,3)
NCHG1DTABS23
Product status link STH180N10F3-2
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