180N10F3
180N10F3 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code
STH180N10F3-2
100 V
- Ultra low on-resistence
- 100% avalanche tested
RDS(on) max. 4.5 mΩ
ID 180 A
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STrip FET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2,3)
NCHG1DTABS23
Product status link STH180N10F3-2
Product summary
Order code
STH180N10F3-2
Marking
Package
H2PAK-2
Packing
Tape and reel
DS7317
- Rev 3
- March 2022 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-source voltage
Gate-source voltage
ID (1)
Drain current (continuous) at TC = 25 °C
ID...
